发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 When a semiconductor integrated circuit device having a wiring structure of three or more layers is hierarchically considered as a collection of a plurality of functional blocks, each functional block is internally connected by wirings in the first wiring layer, in which wirings have their main extended direction prescribed to be the X-direction, and wirings in the second wiring layer, in which wirings have their main extended direction prescribed to be the Y-direction, formed over the first wiring layer. Wirings in the third wiring layer, in which wirings have their main extended direction prescribed to be the same as the wirings in the second wiring layer, formed over the second wiring layer, together with wirings in the first and second wiring layer, are used as signal wirings between functional blocks, while the wirings in the third wiring layer are used as power supply wirings for providing power supply to functional blocks. As the power supply paths to functional blocks, a plurality of power supply wirings are branched off from the power supply electrode such as a power supply pad and terminated there. The power supply electrode on the high voltage side and the power supply electrode on the low voltage side are disposed separately at opposing edge portions of the semiconductor substrate and the power supply wirings proceeding therefrom to their target functional blocks are bent in the vicinity of the edge portion of the semiconductor substrate and therefrom extended straight to the target points.
申请公布号 KR100192065(B1) 申请公布日期 1999.06.15
申请号 KR19910006468 申请日期 1991.04.23
申请人 HITACHI COMMUNICATION SYSTEMS INC.;HITACHI TOHBU SEMICONDUCTOR LTD.;HOTACHI MICROCOMPUTER SYSTEM LTD.;HITACHI LTD. 发明人 YAMAZAKI, KOICHI;OGURA, SETSUO;YAMAUCHI, KENYA;KOTAMURA, YIKINORI;NAGASETSU, YOSHI;KAMEGAKI, KAZUYUKI
分类号 H01L21/3205;H01L21/768;H01L21/82;H01L23/52;H01L23/528;H01L27/02;(IPC1-7):H01L21/768 主分类号 H01L21/3205
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