INTEGRATED CIRCUIT SEMICONDUCTOR MEMORY HAVING INTERNAL POWER SUPPLY GENERATOR

摘要

PROBLEM TO BE SOLVED: To prevent the bandwidth of a memory from decreasing by generating a second reference voltage variable depending on an external power supply voltage and supplying a data output butter with an internal voltage generated based on the second reference voltage thereby preventing a skew from being generated between high and low output voltages by an abnormal external power supply voltage. SOLUTION: An internal power supply voltage generator 200 generates an internal power supply voltage VINYQ inversely proportional to an external power supply voltage EVC when the external power supply voltage EVC is higher than a specified level, otherwise generates the internal power supply voltage VINTQ proportional to the external power supply voltage EVC. Consequently, a skew is not generated between high and low output voltages in a semiconductor memory 100 due to fluctuation in the external power supply voltage EVC even if an external power supply voltage EVC higher than a normal level is fed to the semiconductor memory 100.