| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element which has high luminous efficiency. SOLUTION: A nitride semiconductor light-emitting element is provided with a p-type gallium nitride semiconductor layer 13, formed on a translucent substrate 11 with one or two or more gallium nitride semiconductor layers 12,... containing a light-emitting layer inbetween, a first positive electrode 15 which is in ohmic contact with the layer 13, and a second positive electrode 15 formed on part of the electrode 15. In the second positive electrode 16, the layer formed in contact with the first positive electrode 15 is formed by using Au or Pt as a main component, so that this enables the light-emitting layer immediately below the electrode 16 to emit light. |
