Process for making an integrated circuit device with embedded DRAM,申请号GB19970025020-传众专利搜索

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发明名称	Process for making an integrated circuit device with embedded DRAM
摘要
申请公布号	GB2331839(A)	申请公布日期	1999.06.02
申请号	GB19970025020	申请日期	1997.11.26
申请人	* UNITED MICROELECTRONICS, CORP.	发明人	H.J. * WU;SHIH-WEI * SUN;JACOB * CHEN;TRI-RUNG * YEW
分类号	H01L21/8242;H01L27/108;(IPC1-7):H01L27/108;H01L21/824	主分类号	H01L21/8242
代理机构		代理人
主权项
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