| 发明名称 |
Method for forming a mixed-signal CMOS circuit that includes non-volatile memory cells |
| 摘要 |
A CMOS device that includes three-volt MOS transistor, five-volt MOS transistors, FLASH EPROM cells, poly resistors, and double-poly capacitors is formed in a single integrated CMOS process flow. The FLASH EPROM cells are formed as single-transistor memory cells that operate on low to very-low voltages. |
| 申请公布号 |
US5908311(A) |
申请公布日期 |
1999.06.01 |
| 申请号 |
US19960690203 |
申请日期 |
1996.07.25 |
| 申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
CHI, MIN-HWA;TENG, CHIH-SIEH;BERGEMONT, ALBERT |
| 分类号 |
H01L21/8247;H01L27/105;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8247 |
| 代理机构 |
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