发明名称 |
TFT-LCD AND FABRICATION METHOD THEREOF |
摘要 |
Methods of forming thin-film transistor display devices including forming a gate line and a gate electrode on a face of a substrate and forming a semiconductor layer that is insulated from the gate line. A data line and a source/drain electrode are formed on the semiconductor layer. The data line and the source/drain electrode are formed as composites of at least two different metal conductive layers. A transparent pixel electrode is formed that is electrically coupled to the drain electrode. |
申请公布号 |
KR100190023(B1) |
申请公布日期 |
1999.06.01 |
申请号 |
KR19960005307 |
申请日期 |
1996.02.29 |
申请人 |
SAMSUNG ELECTRONICS CO, LTD. |
发明人 |
KIM, DONG-GYU |
分类号 |
G02F1/136;H01L21/336;H01L29/417;H01L29/45;(IPC1-7):G02F1/136 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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