发明名称 TFT-LCD AND FABRICATION METHOD THEREOF
摘要 Methods of forming thin-film transistor display devices including forming a gate line and a gate electrode on a face of a substrate and forming a semiconductor layer that is insulated from the gate line. A data line and a source/drain electrode are formed on the semiconductor layer. The data line and the source/drain electrode are formed as composites of at least two different metal conductive layers. A transparent pixel electrode is formed that is electrically coupled to the drain electrode.
申请公布号 KR100190023(B1) 申请公布日期 1999.06.01
申请号 KR19960005307 申请日期 1996.02.29
申请人 SAMSUNG ELECTRONICS CO, LTD. 发明人 KIM, DONG-GYU
分类号 G02F1/136;H01L21/336;H01L29/417;H01L29/45;(IPC1-7):G02F1/136 主分类号 G02F1/136
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