| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device of high reliability in mechanical structure by forming the film thickness of a passivation layer to be thicker than the film thickness of an aluminum layer in the structure of the aluminum electrode pad and passivation film of a semiconductor device. SOLUTION: First, an inter-layer insulating film 2 of a silicon dioxide is formed on the surface of a silicon substrate 1, and an aluminum wiring layer 3 which is 1.0μm thick is formed on this. Next, a nitride silicon film 4 is grown by a CVD method on an entire surface, including an aluminum pad with film thickness which is 1.2μm. Then, an opening 7 in which aluminum is exposed is formed on the passivation film of the aluminum electrode pad part by dry etching method. Then, a barrier metal 8 is formed on the aluminum electrode pad including the aluminum exposed part, and a metal bump 9 is formed on this through electrolytic plating method.</p> |
