Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers

摘要

A method and apparatus for depositing single crystal, epitaxial films of silicon on a plurality of substrates in a hot wall, isothermal deposition system is described. The deposition temperatures are less than about 800 DEG C., and the operating pressures during deposition are such that non-equilibrium growth kinetics determine the deposition of the silicon films. An isothermal bath gas of silicon is produced allowing uniform deposition of epitaxial silicon films simultaneously on multiple substrates. This is a flow system in which means are provided for establishing an ultrahigh vacuum in the range of about 10-9 Torr prior to epitaxial deposition. The epitaxial silicon layers can be doped in-situ to provide very abruptly defined regions of either n- or p-type conductivity.