发明名称 FORMING METHOD FOR NEGATIVE TYPE RESIST PATTERN
摘要 PROBLEM TO BE SOLVED: To provide a method in which an advantage of a surface imaging method using a resin material which has an aromatic ring structure, having high dry etching resistance and a negative type pattern is formed with high sensitivity, even in the case of a light lithography using an ArF excimer laser light source. SOLUTION: A lower layer resist 2 having a surface layer part comprising components including an aromatic ring and having a functional group which is protected by an acid decomposing group is formed on a substrate 1, a photosensitive layer 3 which is made of an applying material, virtually not having an absorbing band in an ArF excimer laser exposure wavelength and an acid precursor is formed thereon, a predetermined pattern exposure is performed, and acid is made to be generated at the exposure part. The functional group which is protected by the acid resolving group of the lower layer resist 2 contacting with the acid generating part 5 is protected. The photosensitive layer 3 is eliminated, the surface which is protected is exposed and processed by an reactive organic metal regent, and the lower layer resist 2 is exposed in an oxidizing atmosphere.
申请公布号 JPH11135397(A) 申请公布日期 1999.05.21
申请号 JP19970296654 申请日期 1997.10.29
申请人 HITACHI LTD 发明人 SHIRAISHI HIROSHI;HATTORI KOJI;SAKAMIZU TOSHIO;ARAI TADASHI
分类号 G03F7/023;G03F7/038;G03F7/26;G03F7/38;H01L21/027;H01L21/302;H01L21/3065 主分类号 G03F7/023
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