Semiconductor device produced by dry etching a narrow connection via

摘要

A semiconductor device is produced by forming an interlayer insulation layer (6) to cover a floating connection layer (3) on a substrate (100), forming a connection via (4) through the layers (6, 3) by dry etching using a fluorocarbon and forming a conductive plug (5) in the via for electrical connection to the connection layer (3). Independent claims are also included for production of similar devices which have: (i) a rib capacitor; or (ii) several floating polysilicon layers.