| 摘要 |
A fork-shaped capacitor of a dynamic random access memory cell is disclosed. This capacitor includes a semiconductor layer (110), and a first dielectric layer (119) formed over the semiconductor layer. The capacitor also includes a first doped region (118) formed on a portion of the first dielectric layer, the first doped region communicating to the semiconductor layer via a hole in the first dielectric layer. At least two second doped regions (122) are formed on the first doped region, each of the doped regions being spaced from each other. Further, at least two third doped regions (126) are formed on the first dielectric layer, each of the third doped regions being spaced from each other, each of the third doped regions being spaced from each of the second doped regions, wherein a portion of each of the third doped regions abuts a sidewall of the first doped region. Finally, the capacitor includes a second dielectric film (136) formed on surface of the first doped region, the second doped regions, and the third doped regions; and a conductive layer (138) formed on the second dielectric film.
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