| 摘要 |
A process for forming an increased surface area, buried contact region, for a MOSFET device, has been developed. The process features creating a mini-trench, in an insulator filled shallow trench, exposing a vertical surface of the semiconductor substrate, along the side of the mini-trench. An angled, phosphorous, ion implantation procedure, creates a buried contact region along a top surface, as well as along the vertical surface of the semiconductor substrate, exposed in the mini-trench.
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