| 摘要 |
A method of preparing a semiconductor device, comprising: forming an amorphous silicon layer on a substrate, and applying shots of an excimer laser beam to the amorphous silicon layer to convert the amorphous silicon layer into a polysilicon layer having a plurality of silicon grains, each of the grains having a grain size and including a crystallite having a crystallite size on the (111) plane, an average value of the crystallite sizes on the (111) plane of the crystallites included in the polysilicon layer being sixty percent or greater of an average value of the grain size.
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