| 摘要 |
PROBLEM TO BE SOLVED: To enable a high-quality thin film semiconductor crystal to be manufactured. SOLUTION: According to this manufacture, a thin film semiconductor 4 on the surface side is partially heated and fused and the fused area is moved, thereby continuously recrystallizing the surface side thin film semiconductor 4. In this case, a first insulating film 3 is formed on both of the surface and back face of a substrate 2 and the thin film semiconductor 4 is formed on the first insulating film on both of the surface and back face of the substrate 2. The thin film semiconductor 4 on the back face side is patterned in stripes on the first insulating film, a second insulating film 5 is formed on the thin film semiconductor 4 on both of the surface and back face sides, and after that, the surface side thin film semiconductor 4 is recrystallized on the first insulating film 3 on the surface side of the substrate 2 by a fusing and recrystallizing method. |
