Wiring network and semiconductor package

摘要

This is a wiring network for forming a semiconductor element, the wiring network being formed by film-forming using a sputtering target comprising a high purified metal material selected from the group consisting of Ti, Zr and Hf, wherein the high purified metal material has an Al content of not more than 10ppm and each of Na and K contents of not more than 0.1ppm.