发明名称 |
Semiconductor integrated circuit |
摘要 |
A drain and a source of a field-effect transistor are connected to first and second signal terminals, respectively. A first control terminal is connected to a gate. A first resistor is interposed between the gate and the first control terminal. Capacitors are interposed between the source/drain and the first and second signal terminals, respectively. A control terminal is connected to at least one of the source/drain via a second resistor. High frequency signals supplied through the first signal terminal is sent through the field-effect transistor and outputted through the second signal terminal, and a quantity of the transmitted high frequency signals is controlled by a control voltage signal applied across the first and second control terminals. This structure provides a high frequency semiconductor integrated circuits which reduces a power consumption and an occupied area, increases a switchable power, suppresses output distortion, and simplifies a peripheral circuit.
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申请公布号 |
US5903178(A) |
申请公布日期 |
1999.05.11 |
申请号 |
US19970948033 |
申请日期 |
1997.10.09 |
申请人 |
MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
MIYATSUJI, KAZUO;UEDA, DAISUKE |
分类号 |
H03F3/193;H03K17/00;H03K17/693;(IPC1-7):H01P1/22 |
主分类号 |
H03F3/193 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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