Thermal processing of oxide-compound semiconductor structures

摘要

A method of thermal processing a supporting structure comprised of various compound semiconductor layers having a Gd free Ga2O3 surface layer including coating the surface layer with a dielectric or a metallic cap layer or combinations thereof, such that the low Dit Ga2O3-compound semiconductor structure is conserved during thermal processing, e.g. during activation of ion implants of a self aligned metal-oxide-compound semiconductor gate structure. In a preferred embodiment, the semiconductor structure has a surface of GaAs, the Gd free Ga2O3 layer has a thickness in a range of approximately 1 nm to 20 nm, and the insulating or metallic cap layer has a thickness in a range of approximately 1 nm to 500 nm.