| 摘要 |
PROBLEM TO BE SOLVED: To improve uniformity of the carrier-density distribution of a growing thin film, by controlling carrier-density distribution of a growing thin film by the control of a growing speed. SOLUTION: In raw material which is introduced into a growing chamber 1, thermal decomposition and reaction occur on a semi-insulating GaAs substrate 2 which is heated at a high frequency with an RF coil 3, and epitaxial growing is performed on the substrate 2. The temperature on the semi-insulating GaAs substrate at this time is determined as a 'growing temperature', the pressure in a reaction chamber is determined as a 'growing pressure', and a 'growing speed' is determined by the growing film thickness per unit time for a compound semiconductor thin film such as GaAs epitaxially grown on the substrate. As the growing conditions for both GaAs and AIGaAs, control is performed so that the growing temperature is 600 deg.C, the growing pressure is 0.1 atm, the semi-insulating GaAs substrate has a diameter of 100 mm and the absolute value of the carrier density of each condition is 1×10<17> (cm<-3> ) at the center of the substrate. The growing speed is obtained by the observation of the cross section of an epi-wafer by a transmission-type electronic microscope. Furthermore, the carrier density is obtained by C-V measurement.
|
