发明名称 GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To form a quantum box having an appropriate size by forming the well section and barrier section of an active layer in specific compositions so that the lattice constants of the well and barrier sections may respectively fall within specific ranges. SOLUTION: An active layer 6 has a quantum box structure. A light emitting device has a sapphire substrate on which a buffer layer is formed. The active layer 6 is constituted in such a state that well boxes 61 composed of Ga0.8 In0.2 N are scattered at nearly regular intervals in a barrier layer 62 composed of Al0.05 Ga0.95 N. Since the ratio of the lattice constant a1 of the Ga0.8 In0.2 N to the lattice constant a2 of the Al0.05 Ga0.95 N is larger than 0.02 (|a1-a2|/a2=0.0228), the Ga0.8 In0.2 N does not grow in a laminar state on the Al0.05 Ga0.95 N layer, but in scattered islands. Therefore, the characteristics of the active layer 6 as a quantum box are improved and the manufacture of the layer becomes easier.
申请公布号 JPH11126949(A) 申请公布日期 1999.05.11
申请号 JP19970307944 申请日期 1997.10.21
申请人 TOYODA GOSEI CO LTD 发明人 KOIKE MASAYOSHI;NAGAI SEIJI
分类号 H01L33/06;H01L33/12;H01L33/32;H01S5/00;H01S5/323;H01S5/343 主分类号 H01L33/06
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