发明名称 Photodetector for infrared remote control receiver
摘要 A p type diffusion layer is formed in the surface of an n type semiconductor substrate (12). A low resistance layer (14) is set into the diffusion layer. The semiconductor is fixed with an insulating resin (19) onto a conductive socket (20) and a bond wire connection (21) is made with surface electrodes (18).
申请公布号 DE19845045(A1) 申请公布日期 1999.05.06
申请号 DE1998145045 申请日期 1998.09.30
申请人 MATSUSHITA ELECTRONICS CORP., TAKATSUKI, OSAKA, JP 发明人 OIMURA, KATSUHIKO, OHTSU, SHIGA, JP;OOSAWA, KATSUICH, TAKATSUKI, OSAKA, JP
分类号 H01L31/0203;H01L31/20;(IPC1-7):H01L31/103;G08C23/04 主分类号 H01L31/0203
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