发明名称 |
DRIVING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
A driving method of semiconductor device is provided to discharge electric charges of the capacity device at one time and to reduce deviation of mobility of the transistor. The driving method of the semiconductor device includes the maintenance step and discharge step. The maintenance step is performed to maintain the electric charge even the capacitive element(102) according to the sum total of the threshold voltage of the transistor(101) and video signal voltage. The discharge step is performed to discharge the electric charge of the capacity device through transistor. |
申请公布号 |
KR20090095519(A) |
申请公布日期 |
2009.09.09 |
申请号 |
KR20090018735 |
申请日期 |
2009.03.05 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KIMURA HAJIME |
分类号 |
G09G3/30;G09G3/20;H05B33/12 |
主分类号 |
G09G3/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|