| 摘要 |
A process chamber (14) for processing a substrate (12) in a plasma, comprises a support for supporting the substrate having a surface with a perimeter (32). A gas distributor is provided for distributing process gas into the chamber (14). A plasma generator (40) is used to generate a plasma comprising plasma species from the process gas. A plurality of electrical ground pathways (80) around the perimeter (32) of the substrate (12) are spaced apart, electrically isolated from one another, and provide electrical paths to ground for the charge carried by the plasma species. Preferably, the ground pathways (80) extend through a dielectric surface (70) abutting and extending substantially continuously around the perimeter (32) of the substrate (12).
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