| 摘要 |
In an apparatus for the deposition of polycrystalline diamond on large, flat substrates (3) by the plasma method, with a vacuum chamber (4); with locks for the inward and outward transfer of the substrates; with a device installed in the chamber (4) for conveying the substrates (3) through at least one, preferably through two treatment stations; with hot-filament sources (5, 5', . . . ) forming a first group, installed above the plane of the substrates; with microwave plasma sources (8, 8', . . . ) forming a second group; with an electrode (11) fed with radio frequency underneath the plane of the substrates for generating a bias voltage; and with gas feed pipes (6, 9) opening into the vacuum chamber (4), the hot-filament arrangements (5, 5', . . . ), designed as linear sources, are arranged transversely to the substrate transport direction (a) and form a first coating zone (Z1), where the microwave plasma sources (8, 8', . . . ) are arranged in a row a certain distance away from, and parallel to, the hot-filament sources (5, 5', . . . ) and form together a second coating zone (Z).
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