| 摘要 |
PROBLEM TO BE SOLVED: To improve a gate insulating film in density so as to protect a semiconductor device against damage caused by static electricity and to prevent pin holes from being generated, by a method wherein a silicon oxide film whose surface is nitrided is provided. SOLUTION: A silicon oxide film is formed as a base film on a glass substrate 11, and furthermore, an amorphous silicon film 12 and a silicon oxide film 101 as a mask are formed thereon. An opening is provided to the region 14 of the silicon oxide film 101. Then, a nickel silicate film is formed on the region 14, and the silicon oxide film 101 is removed. Then, the amorphous silicon film 12 is crystallized by thermal annealing. Then, an active region is demarcated by element isolation. The region 14 high in nickel concentration and a terminal part of crystal growth are removed by etching. Then, a silicon oxide film 13 is formed to serve as a gate insulating film, and nitrogen ions are implanted to form a silicon oxide nitride film on the surface of the silicon oxide film 13. Then, a gate electrode 15 and an oxide layer 151 are formed. |
