MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device easily forming metallic silicide with high melting temperature. SOLUTION: A method for manufacturing a semiconductor device includes a step wherein a first metallic film 107 with high melting temperature is formed on silicon regions 101 and 104 and a step for forming metallic silicide with high melting temperature wherein a metallic silicide layer 109 with high melting temperature is formed at the interface of the silicon regions 101 and 104 and the first metallic film 107 with high temperature melting, and the step for forming high temperature melting metallic silicide includes a step wherein a second metallic film 108 with high melting temperature made of the above metal with high melting temperature containing nitrogen and having a low membrane stress not more than 3×10<9> dyne/cm<2> is formed on the first metallic film 107 with high melting temperature and a heat treatment step wherein heat treatment is performed to the first and the second metallic film 107 and 108 with high melting temperature melting in a nitrogen-free atmosphere and the metallic silicide layer 109 with high melting temperature is formed at the interface of the silicon regions 101 and 104 and the first metallic film 107 with high melting temperature.