| 摘要 |
PROBLEM TO BE SOLVED: To increase the operational margin of an overdrive dynamic RAM, etc., and to reduce its peak current. SOLUTION: In a dynamic RAM, etc., of an overdrive scheme, the gate width or the gate length of, for example, a common source line CSP or a driving MOSFET P3, of the sensing amplifier SAO to SA31 is changed with the distance from the overdrive voltage supply node VDD of each sensing amplifier. At this time, the wiring width of the common source wire CSP in the n-th sencing amplifier SAn arranged away from the overdrive voltage supply node VDD, or the value Sn of the gate width or the gate length of the driving MOSFET P3 is set as Ss in the sensing amplifier SAO on the near end side and when the value in the prescribed increasing unit is set at Sm, Sn=Ss+n×Sm is set, and the switching of each value is into a unit. |
