| 摘要 |
PROBLEM TO BE SOLVED: To improve electrical characteristics, by ion-implanting phosphorus atoms into SiC which is maintained at a specified temperature, eliminating generated lattice defect by annealing on the spot, and effectively and electrically performing activation. SOLUTION: A temperature of a P-type hexagonal SiC single crystal is maintained at least 1200 deg.C, and, e.g. phosphorus atoms of 1×10<18> /cm<3> are ion- implanted with energy of, e.g. 80-200 keV in the P-type hexahedral crystal SiC single crystal. Electron concentration in this case is about 10<16> /cm<3> . The phosphorus atoms are electrically activated without performing thermal treatment after ion implantation and turned into an N-type semiconductor. Its activation ratio is about 10<-2> . Hence the temperature of thermal treatment necessary for impurity doping of phosphorus atoms can be lowered, and the activation ratio can be improved by using a high temperature ion implantation method. The temperature of an element forming process of SiC semiconductor can be lowered by using the above method, and it is useful for manufacturing the element of SiC semiconductor.
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