| 摘要 |
A sense amplifier of a virtual ground flat cell is provided that prevents leakage currents. The sense amplifier includes a first through third current/voltage converters and a voltage comparator. The third current/voltage converter maintains electric potentials substantially equal between cells adjacent and nearby a selected cell being read. In particular, the third current/voltage converter maintains electric potentials between the low cells coupled to a ground terminal not selected as a bit line. The first current/voltage converter converts a current from the selected memory cell received via a bit line to a first voltage. The second current/voltage converter converts a reference current to a reference voltage. The voltage comparator compares the first and reference voltages to output a voltage corresponding to the data stored in the selected memory cell. The third current/voltage converter uses the first voltage to convert the current sensed in the bit line into a voltage to cut off the leakage current flowing to a non-selected virtual ground side through a low cell adjacent to a high cell being read.
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