| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacture of a DRAM capacitor in which it is possible to accumulate an sufficient quantity of charge within a capacitor, consequently, there is little effects of leakage of charge from inside of the capacitor, and further the read of the data can be adequately performed. SOLUTION: A first insulating layer 20 is made on a silicon substrate 10 where a transistor is made, and the surface of a substrate where the source/ drain region 18 exists is exposed by etching off it, using etching a mixture gas, and thereon a first conductive layer constituting a lower electrode is made, and further, a structure in the shape of a projection is made in this conductive layer, using self alignment technique. Hereby, in the direction vertical to the substrate, it can be made so that the surface area of the lower electrode can widen upward, such that it becomes possible to accumulate charge at high density. |
