| 摘要 |
A semiconductor device according to the present invention comprises a fuse provided on a substrate, a first insulating layer formed on the substrate and the first insulating layer, a first wiring formed on the first insulating layer, a second insulating layer formed on the first wiring, the second insulating layer including a plurality of insulating films including a water absorptive overcoat, a second wiring formed on the second insulating layer, an opening portion formed in a portion of the second insulating layer corresponding to the fuse by selectively removing the portion and having a side face formed by an exposed portion of the second insulating layer and a bottom face formed by the exposed first insulating layer, a side wall film formed of the same material as that of the second wiring and covering the exposed side face of the opening portion and a passivation film formed on the second insulating layer, the second insulating layer and the side wall film.
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