Low subthreshold leakage current HFET

摘要

A low subthreshold leakage current, p-channel HFET including a GaAs supporting substrate with a first GaAs buffer layer and a first Al0.75Ga0.25As diffusion barrier layer formed thereon and a low temperature grown layer, including one of GaAs and AlGaAs, grown at 200 DEG C. on the first diffusion barrier layer. A second Al0.75Ga0.25As diffusion barrier layer is positioned on the low temperature grown layer and a second GaAs buffer layer is grown on the second diffusion barrier layer. A p-channel HFET is formed on the second buffer layer.