Semiconductor chip production process employs a protective layer

摘要

In a semiconductor chip production process, a protective layer (106) is applied and selectively etched away from regions in which a conductive layer (112) is to be formed, prior to applying and etching an insulating layer. In semiconductor chip production by applying an insulating layer onto a patterned structure on a substrate, etching the insulating layer to form insulation regions and forming a conductive layer (112) in the insulation-free regions, the novelty is that, prior to applying the insulating layer, a protective layer (106) is applied and then etched away from the regions in which the conductive layer (112) is to be formed. An Independent claim is also included for a semiconductor chip with a polysilicon region having, on each side, a silicon nitride layer and an overlying side spacer, a silicide layer being provided on the polysilicon region. Preferred Features: The insulating layer is an oxide layer. The conductive layer (112) is produced by siliciding.