| 摘要 |
PROBLEM TO BE SOLVED: To facilitate fabrication of a GaN based III-V nitride surface emission laser. SOLUTION: The III-V compound surface emission laser has a cavity 40 sandwiched by a pair of scattering Bragg reflectors 50, 60 on a semiconductor substrate wherein the scattering Bragg reflectors 50, 60 are formed by laminating an air layer and a substance layer having higher refractive index than the air layer alternately. The substance layer having higher refractive index than the air layer is preferably composed of any one compound selected from GaN, AlN or InN. Preferably, the cavity 40 comprises an MQW(multiple quantum well) active layer of Inx Ga1-x N (0<=x<=1), a first carrier limit layer of n=Aly Ga1-y N (0<=y<=1, 00<=z<=1) and a second carrier limit layer of P- Alxz Ga1-z N sandwiching the active layer. |
