| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory device having floating and control gate electrodes, which can be microminiaturized with a high reliability and with a low threshold voltage. SOLUTION: A grounding potential supplied from outside of a P type well 4, an N type well 3 and a P type well 5 are set at 3.3 V, a control gate electrode 14 is at -6.5 V, a drain 10 is at 6.5 V, and a source 9 is at 3.3 V or open-circuited. As a result, a voltage between the control gate electrode 14 and the drain 10 becomes 13 V, resulting in a sufficient tunnel current between the drain 10 and floating gate electrode 12. In this way, when the P type well 5 is set positive with respect to the grounding potential externally supplied, an absolute value of the negative voltage applied to the control gate electrode 14 can be made small and also a potential difference between the drain 10 and the P type well 5 can be made small. As a result, a resultant memory transistor can be microminiaturized with a high reliability and with a low threshold voltage.</p> |
