| 摘要 |
<p>PROBLEM TO BE SOLVED: To sufficiently stabilize and fix the potential of display parts and to prevent the drift of the level thereof in one frame by using semiconductor films having the same crystallinity in the channel regions of plural thin-film transistors(TFTs). SOLUTION: A silicon oxide film 51 is deposited as a blocking layer on a glass substrate 50 and a silicon film 52 is formed thereon. The silicon oxide film is formed as a gate insulating film on the silicon semiconductor having an amorphous or semicrystal structure and a metallic film consisting of aluminum is formed on the upper side thereof and is patterned with a photomask, by which gate electrodes 413, 416 are formed. Next, a mask is formed on NTFT regions by using a photoresist, by which PTFTs are first manufactured. Namely, boron is injected into source, drain regions 410, 412, 415 and the gate electrodes 413, 416 are formed as a mask by self-alignment.</p> |
