| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS control diode and a method for manufacturing the same which enables high-speed switching operation, reduction of leakage current with reverse direction, easy integration and easy manufacture of such an element. SOLUTION: A discontinuous region (removal part) is formed in a gate oxide film 102 formed on the surface of a semiconductor substrate 100, so that gate electrodes 104 and 108 are connected to the semiconductor substrate 100. By using such a structure, a MOSFET of majority carrier elements is transformed to a diode having two terminals. A base well region 106 and a source well region 110 are formed in the semiconductor substrate 100 on both sides of the gate oxide film 102. |
