发明名称 |
METAL STAPLES TO PREVENT INTERLAYER DELAMINATION |
摘要 |
The present invention provides in one embodiment thereof an integrated circuit (IC) that includes silicon substrate. The integrated circuit includes a plurality of dielectric and metal layers formed upon the silicon substrate. The plurality of dielectric and metal layers form a die active area (501). The metal have formed therein a first guard wall (508) surrounding the die active area. The metal layers further have formed therein a second segmented guard wall. The segments guard wall surrounds and staples the plurality of metal layers (M1, M2, M3, M4, M5). The IC also includes a passivation layer adhering to the first and the segmented guard walls. |
申请公布号 |
WO9917348(A1) |
申请公布日期 |
1999.04.08 |
申请号 |
WO1998US14023 |
申请日期 |
1998.07.06 |
申请人 |
INTEL CORPORATION;SESHAN, KRISHNA;MIELKE, NEAL, R. |
发明人 |
SESHAN, KRISHNA;MIELKE, NEAL, R. |
分类号 |
H01L23/31;H01L23/58;(IPC1-7):H01L21/283;H01L23/48;H01L29/41 |
主分类号 |
H01L23/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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