| 摘要 |
<p>A carbon-based dielectric film is deposited on a substrate in a processing chamber by first flowing a process gas into the processing chamber. The process gas includes a gaseous source of carbon (such as methane (CH4)) and a gaseous source of halogen (such as a source of fluorine e.g., C4F8). A plasma is then formed from the process gas by applying a first and a second RF power component. Preferably, the second RF component has a frequency of between about 200 kHz and 2 MHz and a power level of between about 5 W and 75 W. The first and a second RF power components are applied for a period of time to deposit a halogen-doped carbon-based layer. The resulting carbon-based film has a low dielectric constant and good gap-fill. The film also exhibits minimal shrinkage during subsequent processing, and may then be annealed.</p> |
