METHOD FOR THERMAL CURING OF IMPLANTATION-DOPED SILICON CARBIDE SEMICONDUCTORS

摘要

An implantation-doped silicon carbide conductor (10i) is thermally cured in a gas flow (12) supplying practically no carbon to said conductor (10i).In one advantageous embodiment, the container (13), carrier (16), radiation shields (4,5) and the base plate (17) are made of metal or a metal compound, e.g. tantalum or tantalum carbide, at least in the places which come into contact with the gas flow (12).