发明名称 |
METHOD AND APPARATUS FOR DEPOSITION OF CARBON |
摘要 |
A carbon-based dielectric film is deposited on a substrate in a processing chamber by first flowing a process gas into the processing chamber. The process gas includes a gaseous source of carbon (such as methane (CH4)) and a gaseous source of halogen (such as a source of fluorine e.g., C4F8). A plasma is then formed from the process gas by applying a first and a second RF power component. Preferably, the second RF component has a frequency of between about 200 kHz and 2 MHz and a power level of between about 5 W and 75 W. The first and a second RF power components are applied for a period of time to deposit a halogen-doped carbon-based layer. The resulting carbon-based film has a low dielectric constant and good gap-fill. The film also exhibits minimal shrinkage during subsequent processing, and may then be annealed. |
申请公布号 |
WO9916930(A1) |
申请公布日期 |
1999.04.08 |
申请号 |
WO1998US16730 |
申请日期 |
1998.08.12 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
ROBLES, STUARDO;YAU, WAI-FAN;XU, PING;SINGH, KAUSHAL |
分类号 |
C01B31/02;C23C16/26;C23C16/505;H01L21/312 |
主分类号 |
C01B31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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