发明名称 |
Bottom source LDMOSFET structure and method |
摘要 |
This invention discloses bottom-source lateral diffusion MOS (BS-LDMOS) device. The device has a source region disposed laterally opposite a drain region near a top surface of a semiconductor substrate supporting a gate thereon between the source region and a drain region. The BS-LDMOS device further has a combined sinker-channel region disposed at a depth in the semiconductor substrate entirely below a body region disposed adjacent to the source region near the top surface wherein the combined sinker-channel region functioning as a buried source-body contact for electrically connecting the body region and the source region to a bottom of the substrate functioning as a source electrode. A drift region is disposed near the top surface under the gate and at a distance away from the source region and extending to and encompassing the drain region. The combined sinker-channel region extending below the drift region and the combined sinker-channel region that has a dopant-conductivity opposite to and compensating the drift region for reducing the source-drain capacitance.
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申请公布号 |
US2008023785(A1) |
申请公布日期 |
2008.01.31 |
申请号 |
US20060495803 |
申请日期 |
2006.07.28 |
申请人 |
ALPHA & OMEGA SEMICONDUCTOR, LTD |
发明人 |
HEBERT FRANCOIS |
分类号 |
H01L23/58;H01L21/336 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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