| 摘要 |
In a process for growing a ZnSe crystal by an MBE or MOCVD process, N2 gas dissociated by electromagnetic waves and vapor In are prepared at a ratio of N:In being 2:1. The atomic gases may be prepared by decomposing InN at a high temperature with electromagnetic irradiation and adding N2 gas to the decomposed product. The atomic gases are fed onto a substrate in a crystal growth region, so as to simultaneously dope ZnSe with In and N at a ratio of 1:2. A n-type dopant In substitutionally occupying a position of Zn makes a 1:1 couple with a p-type dopant N substitutionally occupying a position of Se, and another one N atom coordinates near the atomic couple and serves as an acceptor. As a result, the acceptor is kept in activated state up to higher concentration, and the ZnSe crystal can be heavily doped with the p-type dopant N.
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