发明名称 Inductive load driving and control circuits inside isolation regions
摘要 A semiconductor device includes a power transistor group and a signal circuit on the same substrate. The substrate is grounded at an isolation region at an end of the substrate adjacent to the power transistor group so that the grounded portion of the substrate is distant from the signal circuit.
申请公布号 US5892268(A) 申请公布日期 1999.04.06
申请号 US19970909061 申请日期 1997.08.14
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 YASHITA, TAKAHIRO;KAWAKITA, KEISUKE;MIYAKE, HIDEKI
分类号 H01L21/8222;H01L21/74;H01L21/761;H01L21/765;H01L27/06;(IPC1-7):H01L79/00 主分类号 H01L21/8222
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