发明名称 |
Inductive load driving and control circuits inside isolation regions |
摘要 |
A semiconductor device includes a power transistor group and a signal circuit on the same substrate. The substrate is grounded at an isolation region at an end of the substrate adjacent to the power transistor group so that the grounded portion of the substrate is distant from the signal circuit.
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申请公布号 |
US5892268(A) |
申请公布日期 |
1999.04.06 |
申请号 |
US19970909061 |
申请日期 |
1997.08.14 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
YASHITA, TAKAHIRO;KAWAKITA, KEISUKE;MIYAKE, HIDEKI |
分类号 |
H01L21/8222;H01L21/74;H01L21/761;H01L21/765;H01L27/06;(IPC1-7):H01L79/00 |
主分类号 |
H01L21/8222 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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