发明名称 DEPOSITED FILM FORMING DEVICE AND DEPOSITED FILM FORMING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a deposited film forming device and a deposited film forming method which can improve productivity and can improve uniformity and reproductivity of deposited film characteristics while maintaining excellent film characteristics. SOLUTION: The deposited film forming device is provided with plural cylindrical substrates 105 in a reaction vessel 101 which is capable of being evacuated, gaseous raw material supplied into the reaction vessel is decomposed by high frequency power introduced from a high frequency power introducing means 102 to form a deposited film on the cylindrical substrate. In this case, the cylindrical substrates are arranged at equal spaces on the same circumference and the high frequency power introducing means are installed outside a circle on which the cylindrical substrates are arranged.</p>
申请公布号 JPH1192932(A) 申请公布日期 1999.04.06
申请号 JP19970258684 申请日期 1997.09.24
申请人 CANON INC 发明人 MURAYAMA HITOSHI;OKAMURA TATSUJI;AKIYAMA KAZUYOSHI;OTSUKA TAKASHI;SHIRASAGO TOSHIYASU;HOSOI KAZUTO
分类号 G03G5/08;C23C16/00;C23C16/458;C23C16/509;H01J37/32;H01L21/205;H01L21/285;H01L31/20;(IPC1-7):C23C16/00 主分类号 G03G5/08
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