发明名称 |
Reduction of pad erosion |
摘要 |
<p>Improved technique of forming trench capacitors without causing excessive erosion at the edges of the array region resulting from polishing. The erosion is reduced by providing a block mask to protect the array region while partially removing a portion of the hard mask used to etch the trenches in the field region. The partial etch equalizes the height of the hard mask in the array and field region after formation of the deep trenches by a reactive ion etch.</p> |
申请公布号 |
EP0905749(A2) |
申请公布日期 |
1999.03.31 |
申请号 |
EP19980115707 |
申请日期 |
1998.08.20 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
PLOESSL, ROBERT;FLIENTER, BERTRAND |
分类号 |
H01L21/318;H01L21/302;H01L21/3065;H01L21/308;H01L21/334;H01L21/8242;H01L27/108;(IPC1-7):H01L21/033;H01L21/311;H01L21/320 |
主分类号 |
H01L21/318 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|