Method of etching semiconductor laser device having AlxGa1-xAs and AlvGa1-(v+y)InyP compound

摘要

An (Al,Ga)As/(Al,Ga,In)P semiconductor layer structure is etched using an SiCl4 or an SiCl4/(He,Ne) plasma. The etching is carried out at 0 DEG to 80 DEG C. and at a plasma pressure below 1.33x10-1 Pa (1 mTorr). The etched surfaces are sufficiently smooth for the etching process to be used in the production of (Al,Ga)As/(Al,Ga,In)P semiconductor lasers.