发明名称 Method of making high sensitivity micro-machined pressure sensors and acoustic transducers
摘要 A method of making a pressure sensor or acoustic transducer having high sensitivity and reduced size. A thin sensing diaphragm is produced by growing a single crystal, highly doped silicon layer on a substrate using a chemical vapor deposition process. The diaphragm is incorporated into a pressure sensor or acoustic transducer which detects pressure variations by a change in the capacitance of a capacitor which includes the diaphragm as a movable member. The thin diaphragm produces a highly sensitive device which can be fabricated in a smaller size than sensors or transducers having thicker diaphragms.
申请公布号 US5888845(A) 申请公布日期 1999.03.30
申请号 US19960643091 申请日期 1996.05.02
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 BASHIR, RASHID;KABIR, ABUL
分类号 G01L9/00;H01L21/027;H01L21/306;H04R31/00;(IPC1-7):H01L21/02 主分类号 G01L9/00
代理机构 代理人
主权项
地址