| 摘要 |
PROBLEM TO BE SOLVED: To easily form a through-hole, even in the case of using a semiconductor material difficult of etching. SOLUTION: This method of manufacturing a structure 14 having a microelectronic element 20 comprises the steps of fixing a thin film 12 made of material difficult of etching onto the front surface of a first board formed of easily etched material and functioned as a support, forming the element 20 in the film 12, forming a through hole 33 by etching, and metallizing the hole 33 so that an electrode 18 formed on a rear surface of the first board is connected electrically to a source electrode 24 of the element 20. |
