| 摘要 |
PROBLEM TO BE SOLVED: To realize interconnection metal layer deposition by using CVD method at high efficiency and reliability, while the capacitor degradation is prevented, in a semiconductor device having a capacitor with a perovskite type oxide ferroelectrics layer and an electrode contact hole of a high aspect ratio, in the manufacture of the semiconductor device. SOLUTION: Accordingly to this method, wiring of a semiconductor device comprising such capacitor as having a capacitor dielectric layer 15 of perovskite type oxide ferroelectric is formed. Here, after an electrode contact hole has been formed at an inter-layer insulating layer 17, a hydrogen-block metal layer of hydrogen-storage metal or hydrogen-impermeable metal is formed over the entire surface, a wiring 20 is formed on the hydrogen-block metal layer by applying CVD method, and a vacuum heating process is performed for excluding hydrogen under a condition such that at least the entire surface is covered with the hydrogen-block metal layer. |
