| 摘要 |
PROBLEM TO BE SOLVED: To enable corresponding high integration and the narrow pitching of a semiconductor integrated circuit element by a method wherein the terminal of an electronic circuit is formed by the copper foil having no coarse particulates of copper, a copper alloy and their oxide. SOLUTION: A semiconductor chip 1 is protected by sealing together with a lead frame using an epoxy resin molded article 2, an electrode terminal 3 is provided outside the epoxy resin molded article 2, and the electrode terminal 3 is connected to the terminal 6, formed by electrolytic copper foil having no coarse particulates of a printed wiring board 4 using solder 7. An Ni-Mo-Co alloy is electroplated on the adhesion surface of the electrolytic copper foil of the terminal 6, a silazane compound is applied thereon for 10 seconds, and after drying up by heating at 120 deg.C for 30 minutes, the electrolytic copper foil is heat treated for two hours. As a result, the terminal 6 can be micromachined, and a semiconductor integrated circuit element can be highly integrated and narrow pitched. |
